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AS5045
Data Sheet
6.4.5
Tristate CMOS Output: DO
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
High level output voltage
Low level output voltage
V OH
V OL
VDD5V –0.5
VSS+0.4
V
V
Output current
Tri-state leakage current
I O
I OZ
4
2
1
mA
mA
μA
VDD5V: 4.5V
VDD5V: 3V
6.5 Magnetic Input Specification
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Two-pole cylindrical diametrically magnetised source:
Parameter
Diameter
Thickness
Magnetic input field
amplitude
Magnetic offset
Symbol
d mag
t mag
B pk
B off
Min
4
2.5
45
Typ
6
Max
75
± 10
Unit
mm
mm
mT
mT
Note
Recommended magnet: ? 6mm x 2.5mm for
cylindrical magnets
Required vertical component of the magnetic
field strength on the die’s surface, measured
along a concentric circle with a radius of 1.1mm
Constant magnetic stray field
Field non-linearity
5
%
Including offset gradient
Input frequency
(rotational speed of
magnet)
Displacement radius
Eccentricity
Recommended magnet
material and
temperature drift
www.austriamicrosystems.com
f mag_abs
Disp
Ecc
2.44
0.61
0.25
100
-0.12
-0.035
Revision 1.7
Hz
mm
μm
%/K
146 rpm @ 4096 positions/rev.; fast mode
36.6rpm @ 4096 positions/rev.; slow mode
Max. offset between defined device center and
magnet axis (see Figure 18 )
Eccentricity of magnet center to rotational axis
NdFeB (Neodymium Iron Boron)
SmCo (Samarium Cobalt)
8 – 33
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